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mainostaa kaivaa Täsmällisyys transistori laturissa aksentti kuvitteellinen hyppää kyytiin

Eu-sovittimen pistoke 2 litteänastainen Eu 2 pyöreä nastainen laturi 91f4 |  Fyndiq
Eu-sovittimen pistoke 2 litteänastainen Eu 2 pyöreä nastainen laturi 91f4 | Fyndiq

NPN-transistori 2N3904 TO-92 | ihmevekotin.fi
NPN-transistori 2N3904 TO-92 | ihmevekotin.fi

Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional  Tellurene Synaptic Transistor for Neuromorphic Edge Computing | ACS Applied  Materials & Interfaces
Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing | ACS Applied Materials & Interfaces

NPN-Transistori 140V 10A 100W >30MHz B>55-160, TO-247, RoHS / 2SC3182 -  Triopak Oy
NPN-Transistori 140V 10A 100W >30MHz B>55-160, TO-247, RoHS / 2SC3182 - Triopak Oy

N-KANAVA MOSFET - UNI-POLAARINEN - 20V - 6,8A - 1,28W - TSOP6 3 kpl -  Radioduo.fi verkkokauppa
N-KANAVA MOSFET - UNI-POLAARINEN - 20V - 6,8A - 1,28W - TSOP6 3 kpl - Radioduo.fi verkkokauppa

Electrostatically Controllable Channel Thickness and Tunable Low-Frequency  Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect  Transistors with h-BN Dielectric | ACS Applied Materials & Interfaces
Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric | ACS Applied Materials & Interfaces

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on  MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters
Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters

MJL21194G | onsemi Tehotransistori, NPN, 250V, TO-264 | Elfa Distrelec Suomi
MJL21194G | onsemi Tehotransistori, NPN, 250V, TO-264 | Elfa Distrelec Suomi

LUCAS ELECTRICAL LRA02167 Laturi 14V, 150A LRA02167: Tilaa nyt!
LUCAS ELECTRICAL LRA02167 Laturi 14V, 150A LRA02167: Tilaa nyt!

PNP transistori 60V 0,6A 0,8W, - Kouluelektroniikka Oy
PNP transistori 60V 0,6A 0,8W, - Kouluelektroniikka Oy

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on  MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters
Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters

NPN-Transistori VHF/UHF 675MHz TO-72 / BF180 - Triopak Oy
NPN-Transistori VHF/UHF 675MHz TO-72 / BF180 - Triopak Oy

P-kanava teho MOSFET 60V / 25A TO220 | ihmevekotin.fi
P-kanava teho MOSFET 60V / 25A TO220 | ihmevekotin.fi

PNP-transistori 2N3906 TO-92 | ihmevekotin.fi
PNP-transistori 2N3906 TO-92 | ihmevekotin.fi

NPN Darlington Transistori TO-202 50V 0,5A Hfe 10000-60000 6,25W 75MHz /  NTE265 - Triopak Oy
NPN Darlington Transistori TO-202 50V 0,5A Hfe 10000-60000 6,25W 75MHz / NTE265 - Triopak Oy

PNP-transistori Dual 45V 10mA 0,75W >100MHz TO-77-6 / 2N5117 - Triopak Oy
PNP-transistori Dual 45V 10mA 0,75W >100MHz TO-77-6 / 2N5117 - Triopak Oy

TRANSISTORI RF 2SC1944 - PARTCO
TRANSISTORI RF 2SC1944 - PARTCO

872901098, Sony Transistor 2SA1492M-0PY | EET
872901098, Sony Transistor 2SA1492M-0PY | EET

TRANSISTORI 2N2222 TO92 KOTELOSSA (PN2222) - PARTCO
TRANSISTORI 2N2222 TO92 KOTELOSSA (PN2222) - PARTCO

Impact of device scaling on the electrical properties of MoS2 field-effect  transistors | Scientific Reports
Impact of device scaling on the electrical properties of MoS2 field-effect transistors | Scientific Reports

VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw  nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN
VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN

20 Pcs IRF3205 IR MOSFET N-channel JFET 55V110A | Ubuy Finland
20 Pcs IRF3205 IR MOSFET N-channel JFET 55V110A | Ubuy Finland